| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PBYR620CTD | Rectifier diodes Schottky barrier | Philips-Semiconductors | SOT428 | - | - | - | 50 K |
| PBYR625CTD | Rectifier diodes Schottky barrier | Philips-Semiconductors | SOT428 | - | - | - | 50 K |
| STPR620CF | ULTRA FAST RECOVERY RECTIFIER DIODES | SGS-Thomson-Microelectronics | - | - | - | - | 76 K |
| STPR620CT | ULTRA FAST RECOVERY RECTIFIER DIODES | SGS-Thomson-Microelectronics | - | - | - | - | 76 K |
| UNR6210 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
| UNR6211 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
| UNR6212 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
| UNR6212 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
| UNR6213 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
| UNR6214 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
