| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962R9211804VYA | RadHard enhanced SuMMIT E MIL-STD-1553 dual redundant bus controller/remote terminal monitor: SMD. Device type 04. Class designator V. Lead finish solder. Radiation 1E5(100KRad). | distributor | FlatPack | 84 | -55°C | 125°C | 47 K |
| IRFR9210 | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.9A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| IRFR9210 | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.9A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
| IRFR9214 | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A | International-Rectifier | - | 3 | -55°C | 150°C | 107 K |
| IRFR9214 | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A | International-Rectifier | - | 3 | -55°C | 150°C | 107 K |
| SFR9210 | P-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 256 K |
| SFR9214 | P-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 309 K |
| UNR921L | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 202 K |
| UNR921M | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 202 K |
| UNR921N | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 202 K |
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