Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRG4RC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 120 K |
IRG4RC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 120 K |
IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 189 K |
IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 189 K |
IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 189 K |
IRG4RC10U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 131 K |
IRG4RC10U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 131 K |
IRG4RC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | International-Rectifier | - | 3 | -55°C | 150°C | 191 K |
IRG4RC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | International-Rectifier | - | 3 | -55°C | 150°C | 191 K |
RC10S01 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | distributor | - | - | -50°C | 150°C | 14 K |
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