| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFRC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRFRC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 264 K |
| IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 264 K |
| RC205 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 2.0A at Ta=25degC. | distributor | - | 4 | -55°C | 125°C | 20 K |
| RC206 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 2.0A at Ta=25degC. | distributor | - | 4 | -55°C | 125°C | 20 K |
| RC207 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 2.0A at Ta=25degC. | distributor | - | 4 | -55°C | 125°C | 20 K |
| ZRC250N801 | Precision 2.5 V low knee current voltage reference | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 83 K |
| ZRC250N801 | Precision 2.5 V low knee current voltage reference | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 83 K |
| ZRC250N802 | Precision 2.5 V low knee current voltage reference | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 83 K |
| ZRC250N802 | Precision 2.5 V low knee current voltage reference | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 83 K |
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