| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1310S | HEXFET power MOSFET | International-Rectifier | - | 3 | -55°C | 175°C | 361 K |
| PQ05RF14 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 33 K |
| PQ12RF1V | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 65 K |
| PQ15RF15 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 39 K |
| PQ15RF16 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 39 K |
| RF105 | Digital spread spectrum transceiver | distributor | TQFP | 48 | -10°C | 70°C | 119 K |
| RF109 | Digital spread spectrum transceiver | distributor | TQFP | 48 | -10°C | 70°C | 100 K |
| RF137 | Transceiever for GSM application | distributor | TQFP | - | -30°C | 85°C | 114 K |
| RF142 | Heterojunction bipolar transistor power amplifier dual-band controller | distributor | PQFP | - | -30°C | 85°C | 70 K |
| YG902C2RF109 | Silicon diode | distributor | - | 3 | -40°C | 150°C | 790 K |
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