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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF1010EHEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.International-Rectifier-3-55°C175°C195 K
IRF1010ELHEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.International-Rectifier-3-55°C175°C123 K
IRF1010ESHEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.International-RectifierDDPak3-55°C175°C123 K
IRF1010NHEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.International-Rectifier-3-55°C175°C211 K
IRF1010NLHEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.International-Rectifier-3-55°C175°C146 K
IRF1010NSHEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.International-RectifierDDPak3-55°C175°C146 K
IRF1104HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.International-Rectifier-3-55°C175°C101 K
IRF1310NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.International-Rectifier-3-55°C175°C96 K
IRF1310NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.International-RectifierDDPak3-55°C175°C156 K
MRF175LV100 W, 28 V,RF power field-effect transistorM-A-COM---manufacturer-of-RF----144 K
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