| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF1404 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 107 K |
| IRF1404L | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 306 K |
| IRF1404S | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 306 K |
| IRF1405 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 169A. | International-Rectifier | - | 3 | -55°C | 175°C | 116 K |
| IRF1405L | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. | International-Rectifier | - | 3 | -55°C | 175°C | 154 K |
| IRF1405S | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 154 K |
| IRF1407 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 130A. | International-Rectifier | - | 3 | -55°C | 175°C | 127 K |
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