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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF140Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.International-Rectifier-3-55°C175°C144 K
IRF140Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.International-Rectifier-3-55°C175°C144 K
IRF140Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.International-Rectifier-3-55°C175°C144 K
IRF1404HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A.International-Rectifier-3-55°C175°C107 K
IRF1404LHEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A.International-Rectifier-3-55°C175°C306 K
IRF1404SHEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A.International-RectifierDDPak3-55°C175°C306 K
IRF1405HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 169A.International-Rectifier-3-55°C175°C116 K
IRF1405LHEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A.International-Rectifier-3-55°C175°C154 K
IRF1405SHEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A.International-RectifierDDPak3-55°C175°C154 K
IRF1407HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 130A.International-Rectifier-3-55°C175°C127 K
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