| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HB52RF1289E2-75B | 128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM | distributor | - | 168 | - | - | 161 K |
| IRF130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF1407L | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 159 K |
| IRF1407S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 159 K |
| IRF1407S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 159 K |
| IRF150 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38A | International-Rectifier | - | 3 | -55°C | 150°C | 150 K |
| IRF1607 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0075 Ohm, ID = 142A. | International-Rectifier | - | 3 | -55°C | 175°C | 234 K |
| IRF1902 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 85 mOhm, ID = 4.0A @ VGS=4.5V, RDS(on) = 170 mOhm, ID = 3,2A @ VGS=2.7V | International-Rectifier | - | 3 | -55°C | 150°C | 107 K |
| RF1S30N06LE | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 91 K |
| RF1S45N06 | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 82 K |
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