| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 123 K |
| IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 211 K |
| IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 146 K |
| IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 146 K |
| SRF1020 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
| SRF1030 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
| SRF1040 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
| SRF1050 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
| SRF1060 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 60 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 183 K |
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