| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 142 K |
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 142 K |
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 142 K |
| IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 140 K |
| MRF428 | 150 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 628 K |
| MRF429 | 150 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 163 K |
| MRF448 | 250 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 135 K |
| MRF448 | 250 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 135 K |
| MRF454 | 80 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 90 K |
| MRF455 | 60 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 92 K |
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