Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ARF422S16 | 1600 V, 940 A, 14 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 30 K |
ARF462S45 | 4500 V, 435 A, 10 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 105 K |
IRF430 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | Fairchild-Semiconductor | - | - | - | - | 56 K |
IRF450 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 144 K |
IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 140 K |
IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 140 K |
IRF4905 | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A | International-Rectifier | - | 3 | -55°C | 175°C | 108 K |
IRF4905L | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A | International-Rectifier | - | 3 | -55°C | 175°C | 163 K |
IRF4905S | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 163 K |
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