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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ARF422S161600 V, 940 A, 14 kA fast recovery diodedistributor-2-30°C125°C30 K
ARF462S454500 V, 435 A, 10 kA fast recovery diodedistributor-2-30°C125°C105 K
IRF430Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5AInternational-Rectifier-3-55°C150°C146 K
IRF450Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 RFairchild-Semiconductor----56 K
IRF450Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12AInternational-Rectifier-3-55°C150°C144 K
IRF460HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21AInternational-Rectifier-3-55°C150°C140 K
IRF460HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21AInternational-Rectifier-3-55°C150°C140 K
IRF4905HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74AInternational-Rectifier-3-55°C175°C108 K
IRF4905LHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74AInternational-Rectifier-3-55°C175°C163 K
IRF4905SHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74AInternational-RectifierDDPak3-55°C175°C163 K
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