| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF640N | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF640NL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF640NL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF640NS | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 155 K |
| IRF640NSTR | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 155 K |
| IRF650B | 200V N-channel MOSFET, 28A | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 898 K |
| IRF6641TR1
| DirectFET TM Power MOSFET | distributor | - | | - | - | 246 K |
| IRF6641TR1PbF | DirectFET TM Power MOSFET | distributor | - | | - | - | 246 K |
| IRF6641TRPbF | DirectFET TM Power MOSFET | distributor | - | | - | - | 246 K |
| IRF6643TRPBF | A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing | distributor | - | | - | - | 263 K |
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