| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF710 | 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 56 K |
| IRF730 | 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 54 K |
| IRF730 | N-CHANNEL 400V - 0.75 OHM - 5.5A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 94 K |
| IRF740 | 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 56 K |
| IRF740 | N-CHANNEL 400V - 0.48 OHM - 10A - TO-220 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
| IRF740S | N-CHANNEL 400V - 0.48 OHM - 10A - D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
| MBRF735 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 114 K |
| MBRF745 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 114 K |
| TRF7003PKR | SILICON RFMOS DISCRETE TRANSISTOR | Texas-Instruments | PK | 3 | - | - | 134 K |
| TRF7610PWP | POWER AMPLIFIER IC FOR GSM | Texas-Instruments | PWP | 24 | - | - | 160 K |
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