| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARF744S25 | 2500 V, 3725 A, 48 kA fast recovery diode | distributor | - | 2 | -30°C | 150°C | 44 K |
| ARF771LTS45 | 4500 V, 1730 A, 28 kA fast recovery diode | distributor | - | 2 | -30°C | 140°C | 105 K |
| ARF794HTS60 | 6000 V, 1060 A, 20 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 147 K |
| ARF794LTS60 | 6000 V, 1160 A, 20 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 105 K |
| IRF7103 | N-channel power MOSFET for fast switching applications, 50V, 3A | International-Rectifier | SO | 8 | -55°C | 150°C | 169 K |
| IRF730 | 400 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 59 K |
| IRF7303 | Power MOSFET for fast switching applications, 30V, 4.9A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
| IRF7401 | N-channel power MOSFET, 20V, 10A | International-Rectifier | SO | 8 | -55°C | 150°C | 118 K |
| IRF7476 | Power MOSFET for high frequency applications, 12V, 15A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
| SRF760 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 60 V. Max average forward rectified current 7.5 A. | distributor | - | 2 | -65°C | 150°C | 178 K |
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