Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF7301 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.050 Ohm. | International-Rectifier | SO | 8 | -55°C | 150°C | 113 K |
IRF7413 | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 11 mOhm @ VGS = 10V, ID = 12A. | International-Rectifier | SO | 8 | -55°C | 150°C | 123 K |
IRF7413A | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.0135 Ohm. | International-Rectifier | SO | 8 | -55°C | 150°C | 116 K |
IRF7416 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.02 Ohm. | International-Rectifier | SO | 8 | -55°C | 150°C | 116 K |
IRF7451 | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.09 Ohm. ID = 3.6A | International-Rectifier | SO | 8 | -55°C | 150°C | 209 K |
IRF7452 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.060 Ohm. ID = 4.5A | International-Rectifier | SO | 8 | -55°C | 150°C | 104 K |
K6T1008C2E-RF70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | TSOP | 32 | -40°C | 85°C | 190 K |
MBRF745 | Switchmode schottky power rectifier | Motorola | - | 2 | -65°C | 150°C | 77 K |
MBRF750 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 114 K |
MBRF760 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 114 K |
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