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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF7301HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.050 Ohm.International-RectifierSO8-55°C150°C113 K
IRF7413HEXFET power MOSFET. VDSS = 30V, RDS(on) = 11 mOhm @ VGS = 10V, ID = 12A.International-RectifierSO8-55°C150°C123 K
IRF7413AHEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.0135 Ohm.International-RectifierSO8-55°C150°C116 K
IRF7416HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.02 Ohm.International-RectifierSO8-55°C150°C116 K
IRF7451HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.09 Ohm. ID = 3.6AInternational-RectifierSO8-55°C150°C209 K
IRF7452HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.060 Ohm. ID = 4.5AInternational-RectifierSO8-55°C150°C104 K
K6T1008C2E-RF70128Kx8 bit, 70ns low low power CMOS static RAMSamsung-ElectronicTSOP32-40°C85°C190 K
MBRF745Switchmode schottky power rectifierMotorola-2-65°C150°C77 K
MBRF750Schottky RectifierGeneral-Semiconductor----114 K
MBRF760Schottky RectifierGeneral-Semiconductor----114 K
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