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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF7467HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12mOhm, ID = 11AInternational-RectifierSO8-55°C150°C114 K
IRF7468HEXFET power MOSFET. VDSS = 40V, RDS(on) = 15.5mOhm @ VGS = 10V, ID = 9.4AInternational-RectifierSO8-55°C150°C232 K
IRF7469HEXFET power MOSFET. VDSS = 40V, RDS(on) = 17mOhm @ VGS = 10V, ID = 9.0AInternational-RectifierSO8-55°C150°C114 K
IRF7470HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10AInternational-RectifierSO8-55°C150°C119 K
IRF7471HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10AInternational-RectifierSO8-55°C150°C214 K
IRF7473HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9AInternational-RectifierSO8-55°C150°C196 K
IRF7478HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.International-RectifierSO8-55°C150°C209 K
IRF7501HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 OhmInternational-RectifierMicro88-55°C150°C143 K
IRF7503HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.135 OhmInternational-RectifierMicro88-55°C150°C114 K
IRF7504HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.27 OhmInternational-RectifierMicro88-55°C150°C115 K
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