| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
| IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
| IRF7809AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 7.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
| IRF7811A | HEXFET chipset for DC-DC converter. VDS = 28V, RDS(on) = 12mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
| IRF7811AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 11mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 86 K |
| IRF7811W | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 9.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 146 K |
| IRF7822 | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 71 K |
| IRF7901D1 | Dual FETKY co-packaged dual MOSFET plus schottky diode . VDS = 30V, RDS(on) = 38mOhm (Q1). VDS = 30V, RDS(on) = 32mOhm (Q2 and schottky). | International-Rectifier | SO | 8 | -55°C | 150°C | 256 K |
| SRF735 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 35 V. Max average forward rectified current 7.5 A. | distributor | - | 2 | -65°C | 150°C | 178 K |
| SRF745 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 45 V. Max average forward rectified current 7.5 A. | distributor | - | 2 | -65°C | 150°C | 178 K |
| SRF750 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward rectified current 7.5 A. | distributor | - | 2 | -65°C | 150°C | 178 K |
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