| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF820B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 858 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
| IRF821FI | N-channel MOSFET, 450V, 2.0A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| IRF822 | N-channel enhancement mode power MOS transistor, 500V, 2.8A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF822FI | N-channel enhancement mode power MOS transistor, 500V, 1.9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| IRF823 | N-channel MOSFET, 450V, 2.2A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
| IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| MURF820 | 8.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 103 K |
| SRF820 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 150 K |
| [1] 2 [3] |
|---|
