| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF9130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRF9230 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -200V, RDS(on) = 0.80 Ohm, ID = -6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRF9530 | P-channel MOSFET, 100V, 12A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
| IRF9530 | P-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9531 | P-channel MOSFET, 60V, 12A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
| IRF9531 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9532 | P-channel MOSFET, 100V, 10A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
| IRF9532 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9533 | P-channel MOSFET, 60V, 10A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
| IRF9Z34L | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.14 Ohm, ID = -18A | International-Rectifier | - | 3 | -55°C | 175°C | 334 K |
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