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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF9140HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18AInternational-Rectifier-3-55°C150°C148 K
IRF9140HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18AInternational-Rectifier-3-55°C150°C148 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9410HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.International-RectifierSO8-55°C150°C114 K
IRF9510HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0AInternational-Rectifier-3-55°C175°C171 K
IRF9510SHEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0AInternational-Rectifier-3-55°C175°C176 K
IRF9520NHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8AInternational-Rectifier-3-55°C175°C95 K
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