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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FRF9250H14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETsIntersil-Corporation----48 K
IRF9230Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -200V, RDS(on) = 0.80 Ohm, ID = -6.5AInternational-Rectifier-3-55°C150°C149 K
IRF9230200V Vdss P-Channel FET (field effect transistor)Semelab-Plc-TO3---22 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11AInternational-Rectifier-3-55°C150°C147 K
IRF9240SMD200V Vdss P-Channel FET (field effect transistor)Semelab-Plc-SMD1---25 K
MRF927T1NPN silicon high-frequency transistorMotorolaSOT3--165 K
MRF927T3NPN silicon high-frequency transistorMotorolaSOT3--165 K
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