| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF9510 | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0A | International-Rectifier | - | 3 | -55°C | 175°C | 171 K |
| IRF9510S | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0A | International-Rectifier | - | 3 | -55°C | 175°C | 176 K |
| IRF9520N | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A | International-Rectifier | - | 3 | -55°C | 175°C | 95 K |
| IRF9520NL | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A | International-Rectifier | - | 3 | -55°C | 175°C | 155 K |
| IRF9520NS | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 155 K |
| IRF9530-220M | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 18 K |
| IRF9530N | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A | International-Rectifier | - | 3 | -55°C | 175°C | 113 K |
| IRF9530NL | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A | International-Rectifier | - | 3 | -55°C | 175°C | 173 K |
| IRF9530NS | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 173 K |
| IRF9530SMD | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 22 K |
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