Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF9530 | P-channel MOSFET, 100V, 12A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
IRF9530 | P-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
IRF9531 | P-channel MOSFET, 60V, 12A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
IRF9531 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
IRF9532 | P-channel MOSFET, 100V, 10A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
IRF9532 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
IRF9533 | P-channel MOSFET, 60V, 10A | International-Rectifier | - | 3 | -55°C | 150°C | 449 K |
IRF9540N | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A | International-Rectifier | - | 3 | -55°C | 175°C | 125 K |
IRF9540NL | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A | International-Rectifier | - | 3 | -55°C | 175°C | 187 K |
IRF9540NS | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.117 Ohm, ID = -23A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 187 K |
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