Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AM29LV004B-70RFIB | 4 megabit CMOS 3.0 volt-only boot sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -40°C | 85°C | 455 K |
IRFI064 | HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A | International-Rectifier | - | 3 | -55°C | 150°C | 226 K |
IRFI064 | HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A | International-Rectifier | - | 3 | -55°C | 150°C | 226 K |
IRFI1010N | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A | International-Rectifier | - | 3 | -55°C | 175°C | 109 K |
IRFI3205 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A | International-Rectifier | - | 3 | -55°C | 175°C | 107 K |
IRFI360 | HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
IRFI460 | HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A | International-Rectifier | - | 3 | -55°C | 150°C | 211 K |
IRFI520N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 7.6 A | International-Rectifier | - | 3 | -55°C | 175°C | 133 K |
IRFI540N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.052 Ohm, ID = 20 A | International-Rectifier | - | 3 | -55°C | 175°C | 131 K |
IRFI730G | 400V HEXFET power MOSFET | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
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