| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP250 | 200V standart power MOSFET | distributor | - | 3 | -55°C | 150°C | 47 K |
| IRFP250 | N-channel power MOSFET, 200V, 30A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP251 | N-channel power MOSFET, 150V, 30A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP252 | N-channel power MOSFET, 200V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP253 | N-channel power MOSFET, 150V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP254 | 250V standart power MOSFET | distributor | - | 3 | -55°C | 150°C | 46 K |
| IRFP260 | 200V standard power MOSFET | distributor | - | 3 | -55°C | 150°C | 36 K |
| IRFP264 | 250V standard MOSFET | distributor | - | 3 | -55°C | 150°C | 47 K |
| IRFP27N60K | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A | International-Rectifier | - | 3 | -55°C | 150°C | 91 K |
| IRFP2907 | HEXFET power MOSFET. VDSS = 75 V, RDS(on) = 4.5 mOhm, ID = 209 A | International-Rectifier | - | 3 | -55°C | 175°C | 115 K |
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