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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-Rectifier-3-55°C150°C178 K
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-Rectifier-3-55°C150°C178 K
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18AInternational-Rectifier-3-55°C150°C120 K
IRG4PC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C145 K
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C211 K
IRG4PC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C123 K
IRG4PC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C145 K
IRG4PC40FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C214 K
IRG4PC40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25AInternational-Rectifier-3-55°C150°C182 K
IRG4PC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31AInternational-Rectifier-3-55°C150°C143 K
IRG4PC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C148 K
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