Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRG4PC40UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 245 K |
IRG4PC40W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 116 K |
IRG4PC50 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
IRG4PC50K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.84V @ VGE = 15V, IC = 30A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
IRG4PC50S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41A | International-Rectifier | - | 3 | -55°C | 150°C | 164 K |
IRG4PC50U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
IRG4PC50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 213 K |
IRG4PC50W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
IRG4PH20K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
IRG4PH20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 276 K |
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