Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IRG4PH30K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
IRG4PH30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 212 K |
IRG4PH30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 212 K |
IRG4PH40K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
IRG4PH40K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
IRG4PH40KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A | International-Rectifier | - | 3 | -55°C | 150°C | 217 K |
IRG4PH40U | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 163 K |
IRG4PH40UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 220 K |
IRG4PH50K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 92 K |
IRG4PH50KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 224 K |
<< [7] [8] [9] [10] [11] 12 [13] [14] [15] [16] [17] >> |
---|