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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C190 K
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C190 K
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C120 K
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C120 K
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C189 K
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C189 K
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational-Rectifier-3-55°C150°C189 K
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C131 K
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0AInternational-Rectifier-3-55°C150°C131 K
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.International-Rectifier-3-55°C150°C191 K
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