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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DAC8550IBDGKRG4 16-Bit, Ultra-Low Glitch, Voltage Output Digital-to-Analog Converter (Rev. D)Texas-Instruments---471 K
DAC8550IDGKRG4 16-Bit, Ultra-Low Glitch, Voltage Output Digital-to-Analog Converter (Rev. D)Texas-Instruments---471 K
DAC8551IADGKRG4 16-Bit Ultra-Low Glitch Voltage Output Digital-to-Analog Converter (Rev. B)Texas-Instruments---470 K
DAC8560IADGKRG4 16-Bit, Ultra-Low Glitch, Voltage Output DAC with 2.5V, 2ppm/°C Internal RefTexas-Instruments---1021 K
DAC8560IBDGKRG4 16-Bit, Ultra-Low Glitch, Voltage Output DAC with 2.5V, 2ppm/°C Internal RefTexas-Instruments---1021 K
DAC8560ICDGKRG4 16-Bit, Ultra-Low Glitch, Voltage Output DAC with 2.5V, 2ppm/°C Internal RefTexas-Instruments---1021 K
DAC8560IDDGKRG4 16-Bit, Ultra-Low Glitch, Voltage Output DAC with 2.5V, 2ppm/°C Internal RefTexas-Instruments---1021 K
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.International-Rectifier-3-55°C150°C191 K
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C264 K
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C264 K
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