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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-Rectifier-3-55°C150°C137 K
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-RectifierDDPak3-55°C150°C161 K
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-RectifierDDPak3-55°C150°C161 K
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-Rectifier-3-55°C150°C196 K
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational-RectifierDDPak3-55°C150°C225 K
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18AInternational-Rectifier-3-55°C150°C161 K
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C167 K
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-RectifierDDPak3-55°C150°C308 K
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C234 K
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C139 K
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12AInternational-RectifierDDPak3-55°C150°C188 K
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