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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
RM250CZ-2H250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250CZ-H250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250CZ-M250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250DZ-H250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250DZ-M250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250UZ-24250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250UZ-2H250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250UZ-H250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM250UZ-M250A - transistor module for high voltage medium power general use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
RM25HG-24S25 Amp fast recovery diode module for high switching use, non-insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C25 K
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