| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RM200DA-24F | 200A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 50 K |
| RM200HA-24F | 200A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 47 K |
| RM20C1A-XXF | 20A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 49 K |
| RM20C1A-XXS | 20A - transistor module for medium power, high frequency use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM20CA-XXF | 20A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 49 K |
| RM20CA-XXS | 20A - transistor module for medium power, high frequency use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM20DA-XXF | 20A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 49 K |
| RM20DA-XXS | 20A - transistor module for medium power, high frequency use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM2A | 600 V, 1.2 A, silicon rectifier diode | distributor | D2A | 2 | -65°C | 175°C | 40 K |
| RM2B | 800 V, 1.2 A, silicon rectifier diode | distributor | D2A | 2 | -65°C | 175°C | 40 K |
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