Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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RM25 | Avalanche Diode | Sanken-Electric-Co- | - | - | - | - | 12 K |
RM250CZ-2H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM250CZ-H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM250CZ-M | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM250UZ-24 | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM250UZ-2H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM250UZ-H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM250UZ-M | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
RM25HG-24S | 25 Amp fast recovery diode module for high switching use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 25 K |
RM25TN-2H | Three- phase diode bridge module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 125°C | 27 K |
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