| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DA28F016XS-15 | 16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=5.0, 30 pF load 1.5V I/O levels | Intel-Corporation | SSOP | 56 | 0°C | 70°C | 1 M |
| FS10VS-10 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 42 K |
| FS14VS-10 | 14A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 42 K |
| FS16VS-10 | 16A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS2VS-12 | 2A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS3VS-10 | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS3VS-10 | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS5VS-10 | 5A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| LH52D1000S-10LL | CMOS 1M(128K x 8) static RAM | Sharp | STSOP | 32 | -40°C | 85°C | 81 K |
| LH5PV16256S-12 | CMOS 4M(256K x 16) pseudo-static RAM | Sharp | TSOP | 44 | 0°C | 70°C | 116 K |
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