| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FK10VS-12 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 50 K |
| FK7VS-12 | 7A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 51 K |
| FS10VS-12 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS7VS-12 | 7A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 42 K |
| JHS-121 | 100-200 MHz, quadrature hybrid | M-A-COM---manufacturer-of-RF | SF | 4 | -55°C | 85°C | 104 K |
| LC3517AS-12 | 120ns, 2048-word x 8-bit CMOS static RAM (SRAM) | SANYO-Electric-Co--Ltd- | DIP | 24 | -30°C | 85°C | 365 K |
| MF-10KDS-12T-060 | Transmitter | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 10°C | 65°C | 104 K |
| MF-10KDS-12T-070 | Transmitter | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 10°C | 65°C | 104 K |
| MF-10KDS-12T-071 | Transmitter | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 10°C | 65°C | 104 K |
| UT61256LS-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM | distributor | STSOP | 28 | 0°C | 70°C | 165 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
|---|
