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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FS2VS-18A900V planar process MOSFETdistributor----45 K
FS2VS-18A900V planar process MOSFETdistributor----45 K
FS3VS-18A900V planar process MOSFETdistributor----45 K
FS5VS-18A900V planar process MOSFETdistributor----45 K
FS7VS-18A900V planar process MOSFETdistributor----44 K
G6AS-18Relay. Coil voltage 18VDC. Contact form 1 form A (SPST-NO). Enclosure sealed. Contact material AgCdO. Sensitivity 450mW.distributor---40°C70°C55 K
G6AS-18SRelay. Coil voltage 18VDC. Contact form 1 form A (SPST-NO). Enclosure sealed. Contact material AgSnOInO. Sensitivity 450mW.distributor---40°C70°C55 K
G6AS-18SRelay. Coil voltage 18VDC. Contact form 1 form A (SPST-NO). Enclosure sealed. Contact material AgSnOInO. Sensitivity 450mW.distributor---40°C70°C55 K
G6AS-18SKRelay. Coil voltage 18VDC. Contact form 1 form A (SPST-NO). Enclosure sealed. Contact material AgSnOInO. Sensitivity 200mW.distributor---40°C70°C55 K
G6CS-18Relay. Coil voltage 18VDC. Contact form 1 form C (SPDT). Enclosure sealed. Contact material AgCdO. Sensitivity 450mW.distributor---40°C70°C55 K
G6CS-18SRelay. Coil voltage 18VDC. Contact form 1 form C (SPDT). Enclosure sealed. Contact material AgSnOInO. Sensitivity 450mW.distributor---40°C70°C55 K
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