| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 74ALS00AN | 5.5 V, quad 2-input NAND gate | Philips-Semiconductors | DIP | 14 | 0°C | 70°C | 92 K |
| T7S0026504DN | 200V, 650A phase control single thyristor | distributor | - | - | - | - | 641 K |
| T7S0027504DN | 200V, 750A phase control single thyristor | distributor | - | - | - | - | 629 K |
| T7S0046504DN | 400V, 650A phase control single thyristor | distributor | - | - | - | - | 641 K |
| T7S0047504DN | 400V, 750A phase control single thyristor | distributor | - | - | - | - | 629 K |
| T7S0066504DN | 600V, 650A phase control single thyristor | distributor | - | - | - | - | 641 K |
| T7S0067504DN | 600V, 750A phase control single thyristor | distributor | - | - | - | - | 629 K |
| T7S0087504DN | 800V, 750A phase control single thyristor | distributor | - | - | - | - | 629 K |
| W4NXD8C-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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