| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70T631S008BC | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S008BC | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S008BF | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| IDT70T651S008BC | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T651S008BF | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S008BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T659S008BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| KIC7S00FU | 2 Input NAND Gate | Korea-Electronics-Co--Ltd- | - | - | - | - | 265 K |
| UT54ACS00PCC | RadHard MSI Quadruple 2-input NAND. CMOS compatible I/O level. Lead finish gold. | distributor | Ceramic DIP | 14 | -55°C | 125°C | 15 K |
| UT54ACS00PCX | RadHard MSI Quadruple 2-input NAND. CMOS compatible I/O level. Lead finish optional. | distributor | Ceramic DIP | 14 | -55°C | 125°C | 15 K |
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