| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A64S0616 | 5ns 1M x 16bit low voltage super RAM | distributor | LQFP | 100 | 0°C | 70°C | 172 K |
| A64S0616G-70 | 70ns; 35mA 1M x 16bit low voltage super RAM | distributor | BGA | 48 | 0°C | 70°C | 171 K |
| A64S0616G-70I | 70ns; 35mA 1M x 16bit low voltage super RAM | distributor | BGA | 48 | -40°C | 85°C | 171 K |
| A64S0616G-85 | 85ns; 30mA 1M x 16bit low voltage super RAM | distributor | BGA | 48 | 0°C | 70°C | 171 K |
| A64S0616G-85I | 85ns; 30mA 1M x 16bit low voltage super RAM | distributor | BGA | 48 | -40°C | 85°C | 171 K |
| PM75CBS060 | 600V, 75A six pac IGBT module | distributor | - | - | - | - | 94 K |
| QIS0660001 | 600V, 600A single IGBT module | distributor | - | - | - | - | 167 K |
| RC10S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A. | distributor | - | - | -50°C | 150°C | 14 K |
| RC15S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 15 A. | distributor | - | - | -50°C | 150°C | 14 K |
| RC30S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| << [8] [9] [10] [11] [12] 13 [14] [15] |
|---|
