| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DM74AS10N | Triple 3-Input NAND Gate | Fairchild-Semiconductor | MDIP | 14 | - | - | 46 K |
| DM74LS10N | Triple 3-Input NAND Gate | Fairchild-Semiconductor | MDIP | 14 | - | - | 46 K |
| DM74S10N | Triple 3-Input NAND Gate | Fairchild-Semiconductor | MDIP | 14 | - | - | 33 K |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 217 K |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| MHV12-300S10N | 2-2.5 Watt, input voltage range:12V, output voltage -300V (10mA) HV-power supplie | distributor | SIP | 7 | -10°C | 60°C | 80 K |
| PHV12-350S10N | 3.5-5 Watt, input voltage range:12V, output voltage -350V (10mA) HV-power supplie | distributor | DIP | 7 | -10°C | 50°C | 63 K |
| SSS10N60B | 600V N-channel MOSFET, 600V, 6A | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 909 K |
| STS10NF30L | N-CHANNEL 30V - 0.011 OHM - 10A SO-8 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| TBP24S10N | Standard and low power programmable read-only memory, 256 x 4 bit, 20ns | Texas-Instruments | PDIP | 16 | 0°C | 70°C | 1 M |
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