| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ACS11MS | Radiation Hardened Triple 3-Input AND Gate | Intersil-Corporation | - | - | - | - | 50 K |
| ACTS112MS | Radiation Hardened Dual J-K Flip-Flop | Intersil-Corporation | - | - | - | - | 237 K |
| BAS116LT1 | Switching Diode | ON-Semiconductor | - | 3 | - | - | 63 K |
| HCS112MS | Radiation Hardened Dual JK Flip-Flop | Intersil-Corporation | - | - | - | - | 180 K |
| HCS11MS | Radiation Hardened Triple 3-Input AND Gate | Intersil-Corporation | - | - | - | - | 160 K |
| HCTS112MS | Radiation Hardened Dual JK Flip-Flop | Intersil-Corporation | - | - | - | - | 180 K |
| HCTS11MS | Radiation Hardened Triple 3-Input AND Gate | Intersil-Corporation | - | - | - | - | 121 K |
| STS11NF30L | N-CHANNEL 30V - 0.009 OHM - 11A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 45 K |
| STS11NF3LL | N-CHANNEL 30V - 0.009 OHM - 11A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| STS11NF3LL | N-CHANNEL 30V - 0.009 OHM - 11A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| << [7] [8] [9] [10] [11] 12 [13] [14] [15] [16] [17] >> |
|---|
