| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAS116 | Silicon low leakage diode | Infineon-formely-Siemens | - | 3 | - | - | 98 K |
| BSS110 | P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 285 K |
| DM74ALS11AM | Triple 3-Input AND Gates | Fairchild-Semiconductor | SOIC | 14 | - | - | 46 K |
| DM74ALS11AMX | Triple 3-Input AND Gates | Fairchild-Semiconductor | SOIC | 14 | - | - | 46 K |
| DM74ALS11AN | Triple 3-Input AND Gates | Fairchild-Semiconductor | MDIP | 14 | - | - | 46 K |
| DM74LS112AM | Dual Negative-Edge-Triggered Master-Slave J-K Flip-Flop | Fairchild-Semiconductor | SOIC | 16 | - | - | 52 K |
| DM74LS11M | Triple 3-Input AND Gate | Fairchild-Semiconductor | SOIC | 14 | - | - | 46 K |
| DM74LS11MX | Triple 3-Input AND Gate | Fairchild-Semiconductor | SOIC | 14 | - | - | 46 K |
| DM74LS11N | Triple 3-Input AND Gate | Fairchild-Semiconductor | MDIP | 14 | - | - | 46 K |
| HGT1S11N120CNS | 43A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
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