Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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50S116T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
50S116T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
PS11016 | 600V, 30A cib/ci (integrated module) IGBT module | distributor | - | - | - | - | 408 K |
PS11032 | 600V, 4A cib/ci (integrated module) IGBT module | distributor | - | - | - | - | 83 K |
PS11033 | 600V, 8A cib/ci (integrated module) IGBT module | distributor | - | - | - | - | 82 K |
PS11034 | 600V, 15A cib/ci (integrated module) IGBT module | distributor | - | - | - | - | 83 K |
PS11035 | 600V, 20A cib/ci (integrated module) IGBT module | distributor | - | - | - | - | 83 K |
PS11036 | 600V, 30A cib/ci (integrated module) IGBT module | distributor | - | - | - | - | 90 K |
PS11037 | 600V, 50A six/seven pac IGBT module | distributor | - | - | - | - | 89 K |
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