Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IDT6178S12D | CMOS static RAM 16K (4K x 4-bit) cache-tag RAM | Integrated-Device-Technology-Inc- | DIP | 22 | 0°C | 70°C | 72 K |
IDT6178S12DB | CMOS static RAM 16K (4K x 4-bit) cache-tag RAM | Integrated-Device-Technology-Inc- | DIP | 22 | -55°C | 125°C | 72 K |
IDT7203S12D | CMOS asynchronous FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 | Integrated-Device-Technology-Inc- | DIP | 28 | 0°C | 70°C | 147 K |
IDT7203S12D | CMOS asynchronous FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 | Integrated-Device-Technology-Inc- | DIP | 28 | 0°C | 70°C | 147 K |
IDT7204S12D | CMOS asynchronous FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 | Integrated-Device-Technology-Inc- | DIP | 28 | 0°C | 70°C | 147 K |
M2S12D30TP-10 | 512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7 | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D30TP-10 | 512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7 | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D30TP-10L | 512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7, low power | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D30TP-10L | 512M double data rate SDRAM, 64M x 8 organization, 10ns, Vcc=2.3-2.7, low power | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
SN74LS12D | Triple 3-input NAND gate | Motorola | SOIC | 14 | 0°C | 70°C | 122 K |
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