| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S161622D-TC/L55 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 183 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
| K4S161622D-TC/L60 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 166 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 50 | 0°C | 70°C | 1 M |
| KM48S16030BT-G/F10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz(CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030BT-G/F8 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030BT-G/FH | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz(CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030BT-G/FL | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz(CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM48S16030T-G/F10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM48S16030T-G/F8 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM48S16030T-G/FH | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM48S16030T-G/FL | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
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