Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4S280432M-TC/L10 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L1L | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S281632B-NC/L1H | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=2), interface LVTTL, | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
K4S281632B-NC/L1L | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
K4S281632M-TC/L10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L1H | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L1L | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L80 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
MAX6315US28D1-T | Open-drain microprocessor reset circuit. Reset threshold(nom) 2.80V. Reset timeout period(min) 1ms. | Maxim-Integrated-Producs | SOT143 | 4 | -40°C | 85°C | 113 K |
MAX6315US28D2-T | Open-drain microprocessor reset circuit. Reset threshold(nom) 2.80V. Reset timeout period(min) 20ms. | Maxim-Integrated-Producs | SOT143 | 4 | -40°C | 85°C | 113 K |
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