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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HCTS30MSRadiation Hardened 8-Input NAND GateIntersil-Corporation----134 K
RF1S30N06LESM30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
RF1S30N06LESM30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
RF1S30P05SM30A, 50V, 0.065 Ohm, P-Channel Power MOSFETsIntersil-Corporation----70 K
RF1S30P06SM30A, 60V, 0.065 Ohm, P-Channel Power MOSFETsIntersil-Corporation----71 K
STM2DPFS30LP-CHANNEL 30V - 0.145 OHM - 2A MINISO-8 STRIPFET MOSFET SCHOTTKY RECTIFIERSGS-Thomson-Microelectronics----48 K
STPS30L30CGLOW DROP POWER SCHOTTKY RECTIFIERSGS-Thomson-Microelectronics----97 K
STPS30L30CTLOW DROP POWER SCHOTTKY RECTIFIERSGS-Thomson-Microelectronics----97 K
STPS30L60CWPOWER SCHOTTKY RECTIFIERSGS-Thomson-Microelectronics----57 K
STS3DPFS30LP-CHANNEL 30V - 0.13 OHM - 3A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIERSGS-Thomson-Microelectronics----72 K
STS8NFS30LN-CHANNEL 30V - 0.018 OHM - 8A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIERSGS-Thomson-Microelectronics----84 K
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