| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS351 | Silicon epitaxial schottky barrier diode, UHF detector, mixer application | SANYO-Electric-Co--Ltd- | 1147A | 3 | - | - | 56 K |
| 1SS358 | Schottky barrier diode, VHF, UHF detector, mixer application | SANYO-Electric-Co--Ltd- | 1251A | 3 | - | - | 55 K |
| FDS3570 | 80V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 250 K |
| FDS3580 | N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 201 K |
| FDS3590 | 80V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 204 K |
| NDS351AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 76 K |
| NDS351N | N-Channel Logic Level Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | 3 | - | - | 75 K |
| NDS352AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 78 K |
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | 3 | - | - | 78 K |
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | 3 | - | - | 78 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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