Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FJNS4201R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 68 K |
FJNS4202R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 36 K |
FJNS4203R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 36 K |
FJNS4204R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 65 K |
FJNS4205R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 69 K |
FJNS4206R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 69 K |
FJNS4207R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 37 K |
TMS4257-10NL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | 0°C | 70°C | 1 M |
TMS4257-10NL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | 0°C | 70°C | 1 M |
TMS4257-15NE | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | DIP | 16 | -40°C | 85°C | 1 M |
TMS4257-15NE | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | DIP | 16 | -40°C | 85°C | 1 M |
TMS4257-15NE | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | DIP | 16 | -40°C | 85°C | 1 M |
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